| Base material | N-type phosphorus-doped monocrystalline silicon wafers |
| Thickness | 130±10%μm |
| Size | 182.3mm*210mm±0.25mm, Φ272mm±0.25mm |
| Front side | 16 busbars,236 fingers,blue silicon nitride compound anti-reflection coating |
| Back side | 16 busbars,228 fingers,blue silicon nitride compound anti-reflection coating |
| Eff. Grade (%) | Isc(A) | Voc(V) | Impp(A) | Vmpp(V) | Pmpp(W) | FF (%) |
| 26.0 | 15.806 | 0.735 | 15.369 | 0.646 | 9.93 | 85.46 |
| 25.9 | 15.787 | 0.734 | 15.333 | 0.645 | 9.89 | 85.35 |
| 25.8 | 15.769 | 0.733 | 15.298 | 0.644 | 9.85 | 85.23 |
| 25.7 | 15.750 | 0.732 | 15.286 | 0.642 | 9.81 | 85.12 |
| 25.6 | 15.731 | 0.731 | 15.250 | 0.641 | 9.78 | 85.01 |
| 25.5 | 15.709 | 0.730 | 15.238 | 0.639 | 9.74 | 84.91 |
| 25.4 | 15.698 | 0.728 | 15.226 | 0.637 | 9.70 | 84.87 |
| 25.3 | 15.671 | 0.727 | 15.190 | 0.636 | 9.66 | 84.80 |
| 25.2 | 15.637 | 0.726 | 15.154 | 0.635 | 9.62 | 84.76 |
| 25.1 | 15.612 | 0.725 | 15.141 | 0.633 | 9.58 | 84.68 |
| 25.0 | 15.589 | 0.724 | 15.105 | 0.632 | 9.55 | 84.58 |
| 24.9 | 15.548 | 0.723 | 15.068 | 0.631 | 9.51 | 84.58 |
| 24.8 | 15.496 | 0.722 | 15.032 | 0.630 | 9.47 | 84.64 |
| 24.7 | 15.472 | 0.721 | 14.995 | 0.629 | 9.43 | 84.55 |
| 24.6 | 15.412 | 0.720 | 14.958 | 0.628 | 9.39 | 84.65 |

