| Base material | N-type phosphorus-doped monocrystalline silicon wafers |
| Thickness | 130±10%μm |
| Size | 210mm*210mm±0.25mm, Φ295mm±0.25mm |
| Front side | 18 busbars,234 fingers,blue silicon nitride compound anti-reflection coating |
| Back side | 18 busbars,228 fingers,blue silicon nitride compound anti-reflection coating |
| Eff. Grade (%) | Pmpp(W) | Vmpp(V) | Impp(A) | Voc(V) | Isc(A) |
| 25.8 | 11.38 | 0.635 | 17.916 | 0.725 | 18.665 |
| 25.7 | 11.33 | 0.634 | 17.875 | 0.724 | 18.649 |
| 25.6 | 11.29 | 0.633 | 17.834 | 0.723 | 18.610 |
| 25.5 | 11.24 | 0.632 | 17.777 | 0.722 | 18.566 |
| 25.4 | 11.20 | 0.631 | 17.745 | 0.721 | 18.526 |
| 25.3 | 11.16 | 0.630 | 17.713 | 0.720 | 18.486 |
| 25.2 | 11.11 | 0.629 | 17.665 | 0.719 | 18.442 |
| 25.1 | 11.07 | 0.628 | 17.626 | 0.718 | 18.389 |
| 25.0 | 11.02 | 0.627 | 17.581 | 0.717 | 18.347 |
| 24.9 | 10.98 | 0.626 | 17.540 | 0.716 | 18.300 |
| 24.8 | 10.94 | 0.625 | 17.497 | 0.715 | 18.252 |
| 24.7 | 10.89 | 0.624 | 17.455 | 0.714 | 18.203 |
